? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c; r gs = 1 m 100 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 200 a i d(rms) external lead current limit 100 a i dm t c = 25 c, pulse width limited by t jm 400 a i ar t c = 25 c60a e ar t c = 25 c 100 mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 p d t c = 25 c 680 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1 min 2500 v~ i isol 1 ma, t = 1 s 3000 v~ m d mounting torque, terminal connection torque 1.5/13 lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.0 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss, v gs = 0 v 25 a t j = 150 c 500 a t j = 175 c 2.5 ma r ds(on) v gs = 10 v, i d = 0.5 i d25 7.5 m v gs = 15 v, i d = 400a 5.5 m pulse test, t 300 s, duty cycle d 2 % ds99239e(03/06) polar tm hiperfet power mosfet n-channel enhancement mode fast intrinsic diode avalanche rated v dss = 100 v i d25 = 200 a r ds(on) 7.5 m t rr 150 ns ixfn 200n10p g d s s minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. features ? international standard package ? encapsulating epoxy meets ul 94 v-0, flammability classification ? minibloc with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? synchronous rectification ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls ? low voltage relays advantages ? easy to mount ? space savings ? high power density
ixys reserves the right to change limits, test conditions, and dimensions. ixfn 200n10p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 60 97 s c iss 7600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 2900 pf c rss 860 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 35 ns t d(off) r g = 3.3 (external) 150 ns t f 90 ns q g(on) 235 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 50 nc q gd 135 nc r thjc 0.22 c/w r thcs 0.05 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 200 a i sm repetitive 400 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, di/dt = 100 a/ s 150 ns q rm v r = 50 v, v gs = 0 v 0.4 c i rm 6a ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 sot-227b (ixfn) outline
? 2006 ixys all rights reserved ixfn 200n10p fig. 2. exte nde d output characte ris tics @ 25 o c 0 50 100 150 200 250 300 350 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 25 50 75 100 125 150 175 200 0 0.5 1 1.5 2 2.5 3 3.5 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 25 50 75 100 125 150 175 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v fig. 4. r ds(on ) norm alize d to i d = 100a value vs. junction tem perature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalized i d = 200a i d = 100a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 100a value vs . drain curre nt 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 50 100 150 200 250 300 350 i d - amperes r d s ( o n ) - normalized t j = 25 o c t j = 175 o c v gs = 10v v gs = 15v - - - - fig. 6. drain curre nt vs . cas e tem perature 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. ixfn 200n10p fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175 200 225 250 q g - nanocoulombs v g s - volts v ds = 50v i d = 100a i g = 10m a fig. 7. input adm ittance 0 50 100 150 200 250 300 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source curre nt vs . source-to-drain voltage 0 50 100 150 200 250 300 350 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 10 100 1000 1 10 100 1000 v d s - v olts i d - amperes 100s 1m s dc t j = 175 o c t c = 25 o c r ds(on) lim it 10m s
? 2006 ixys all rights reserved ixfn 200n10p ixys ref: t_200n10p (88) 03-22-06-e.xls fig. 13. maximum transient thermal resistance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - oc / w
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